sfh608 document number 83664 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 1 i179004 i179004 1 2 3 6 5 4 b c e a c nc pb p b -free e3 optocoupler, phototransistor ou tput, low input current, with base connection, 5300 v rms features ? very high ctr at i f = 1.0 ma, v ce = 0.5 v specified minimum ctr at i f = 0.5 ma, v ce = 1.5 v 32 % (typ. 120 %) good ctr linearity with forward current low ctr degradation high collector-emitter voltage v ceo = 55 v isolation test voltage: 5300 v rms low current input low coupling capacitance high common mode transient immunity lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 csa 93751 bsi iec60950 iec60065 applications telecommunications industrial controls office machines microprocessor system interfaces description the sfh 608 is an optocoupler designed for high cur- rent transfer ratio at low input currents with the output transistor saturated. this makes the device ideal for low current switching app lications. the sfh608 is packaged in a six pin plastic dip. order information for additional information on t he available options refer to option information. part remarks sfh608-2 ctr 63 - 125 %, dip-6 sfh608-3 ctr 100 - 200 %, dip-6 sfh608-4 ctr 160 - 320 %, dip-6 sfh608-5 ctr 250 - 500 %, dip-6 SFH608-2-X006 ctr 63 - 125 %, dip-6 400 mil (option 6) sfh608-2-x007 ctr 63 - 125 %, smd-6 (option 7) sfh608-2-x009 ctr 63 - 125 %, smd-6 (option 9) sfh608-3-x006 ctr 100 - 200 %, dip-6 400 mil (option 6) sfh608-3-x007 ctr 100 - 200 %, smd-6 (option 7) sfh608-4-x006 ctr 160 - 320 %, dip-6 400 mil (option 6) sfh608-4-x007 ctr 160 - 320 %, smd-6 (option 7) sfh608-5-x007 ctr 250 - 500 %, smd-6 (option 7)
www.vishay.com 2 document number 83664 rev. 1.4, 26-oct-04 sfh608 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit reverse voltage v r 6.0 v dc forward current i f 50 ma surge forward current t 10 si fsm 2.5 a total power dissipation p diss 70 mw parameter test condition symbol value unit collector-emitter voltage v ce 55 v collector-base voltage v cbo 55 v emitter-base voltage v ebo 7.0 v collector current i c 50 ma surge collector current tp 1.0 ms 100 ma total power dissipation p diss 150 mw parameter test condition symbol value unit isolation test voltage (between emitter and detector, refer to climate din 40046 part 2 nov. 74) t = 1.0 s v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm comparative tracking index per din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature range t stg - 55 to + 150 c operating temperature range t amb - 55 to + 100 c soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c
sfh608 document number 83664 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler current transfer ratio parameter test condition symbol min ty p. max unit forward voltage i f = 5.0 ma v f 1.1 1.5 v reverse voltage i r = 10 av r 6.0 v reverse current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 25 pf thermal resistance r thja 1070 k/w parameter test condition symbol min ty p. max unit voltage, collector-emitter i ce = 10 av ceo 55 v voltage, emitter-base i eb = 10 av ebo 7.0 v collector-emitter capacitance v ce = 5.0, f = 1.0 mhz c ce 10 pf collector - base capacitance v ce = 5.0, f = 1.0 mhz c cb 16 pf emitter - base capacitance v ce = 5.0, f = 1.0 mhz c eb 10 pf thermal resistance r thja 500 k/w collector-emitter leakage current v ce = 10 v i ceo 10 200 na parameter test condition part symbol min ty p. max unit coupling capacitance c c 0.60 pf saturation voltage, collector- emitter i c = 0.32 ma, i f = 1.0 ma sfh608-2 v cesat 0.25 0.4 v i c = 0.5 ma, i f = 1.0 ma sfh608-3 v cesat 0.25 0.4 v i c = 0.8 ma, i f = 1.0 ma sfh608-4 v cesat 0.25 0.4 v i c = 01.25 ma, i f = 1.0 ma sfh608-5 v cesat 0.25 0.4 v parameter test condition part symbol min ty p. max unit coupling transfer ratio i f = 1.0 ma, v ce = 0.5 v sfh608-2 ctr 63 125 % i f = 0.5 ma, v ce = 1.5 v sfh608-2 ctr 32 75 % i f = 1.0 ma, v ce = 0.5 v sfh608-3 ctr 100 200 % i f = 0.5 ma, v ce = 1.5 v sfh608-3 ctr 50 120 % i f = 1.0 ma, v ce = 0.5 v sfh608-4 ctr 160 320 % i f = 0.5 ma, v ce = 1.5 v sfh608-4 ctr 80 200 % i f = 1.0 ma, v ce = 0.5 v sfh608-5 ctr 250 500 % i f = 0.5 ma, v ce = 1.5 v sfh608-5 ctr 125 300 %
www.vishay.com 4 document number 83664 rev. 1.4, 26-oct-04 sfh608 vishay semiconductors switching characteristics typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit turn-on time i c = 2.0 ma (to adjust by i f ), r l = 100 ? , v cc = 5.0 v t on 8.0 s rise time i c = 2.0 ma (to adjust by i f ), r l = 100 ? , v cc = 5.0 v t r 5.0 s turn-off time i c = 2.0 ma (to adjust by i f ), r l = 100 ? , v cc = 5.0 v t off 7.5 s fall time i c = 2.0 ma (to adjust by i f ), r l = 100 ? , v cc = 5.0 v t f 7.0 s figure 1. switching schematic figure 2. switching times isfh608_01 r l v cc i c 47 ? i f isfh608_02 i f = 1.0 ma, v ce = 5.0 v, t on ,t r , t off ,t f ,=f(r l ) fire 3.crrenttransferratio(typ.) fire 4.crrenttransferratio(typ.) isfh608_03 v ce = 0.5 v, c tr =f(t a ,i f ) isfh608_04 v ce = 1.5 v, c tr =f(t a ,i f )
sfh608 document number 83664 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 5. diode forward voltage (typ.) figure 6. diode forward voltage (typ.) figure 7. output characteristics isfh608_05 v f =f(i f ) isfh608_06 i f = 1.0 ma, v f =f(t a ) i ce =f (v ce ,i b ) isfh608_07 fire 8.otptcharateristis fire 9.permissieforardcrrentdiode fire 10.permissiepoerdi ssipationfortransistoranddiode i ce =f (v ce ,i f ) isfh608_08 isfh608_09 i f =f(t a ) isfh608_10 p tot =f(t a )
www.vishay.com 6 document number 83664 rev. 1.4, 26-oct-04 sfh608 vishay semiconductors package dimensions in inches (mm) figure 11. transis tor capacitance isfh608_11 f=1.0 mhz,c ce =f (v ce ) c cb =f (v cb ), c eb =f (v eb ) fire 12.coetoremitterleaaecrrents.temp. isfh608_12 i f =0,v ce =10v, i ceo =f(t a ) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a
sfh608 document number 83664 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 7 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) option 6 .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18450
www.vishay.com 8 document number 83664 rev. 1.4, 26-oct-04 sfh608 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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